Resonant Tunneling Magneto Resistance in Coupled Quantum Wells

TL;DR

This paper theoretically investigates a three-barrier resonant tunneling structure with magnetic quantum wells, predicting giant magnetocurrent and significant spin polarization, which could advance spintronic device development.

Contribution

It introduces a novel theoretical analysis of resonant tunneling in magnetic quantum wells, highlighting potential for high magnetocurrent and spin polarization.

Findings

Giant magnetocurrent predicted in the structure

Significant current spin polarization over a range of biases

Potential implications for spintronic devices

Abstract

A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases.