Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect
R. G. Mani, W. B. Johnson, V. Umansky, V. Narayanamurti, and K. Ploog
TL;DR
This paper investigates phase relations in high mobility GaAs/AlGaAs devices and suggests a new class of integral quantum Hall effect characterized by anti-phase oscillations between Hall and diagonal resistances.
Contribution
It introduces evidence for a novel class of quantum Hall effect with anti-phase resistance oscillations, expanding understanding of quantum Hall phenomena.
Findings
Distinct phase relations between resistances observed
Indications of a new class of integral quantum Hall effect
Anti-phase oscillations between Hall and diagonal resistances
Abstract
An experimental study of the high mobility GaAs/AlGaAs system at large- indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and suggests a new class of integral quantum Hall effect, which is characterized by "anti-phase" Hall- and diagonal- resistance oscillations.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design