Temperature dependent photoluminescence of single CdS nanowires

TL;DR

This study investigates how temperature affects the photoluminescence of single CdS nanowires, revealing insights into their electronic properties and structural uniformity through temperature-dependent PL analysis.

Contribution

It provides detailed analysis of temperature-dependent PL in single CdS nanowires, highlighting defect state behavior and uniformity assessment methods.

Findings

Defect-related PL quenches rapidly with increasing temperature.

Near-band edge PL dominates at room temperature.

PL lines follow temperature-dependent band edge similar to bulk CdS.

Abstract

Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near-band edge (NBE) photoluminescence (PL) and spatially-localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from nanowires follow closely the temperature-dependent band edge, similar to that observed in bulk CdS.