Electron Scattering in Thin GaAs Quantum Wires

TL;DR

This paper calculates electron scattering rates in thin GaAs quantum wires considering various scattering mechanisms and energy spectrum effects, providing insights into electron transport in nanoscale semiconductor structures.

Contribution

It presents a self-consistent calculation of electron scattering rates in GaAs quantum wires, including multiple scattering mechanisms and non-parabolic energy spectrum effects, which is novel.

Findings

Scattering rates vary with wire dimensions and energy.

Surface roughness significantly impacts electron mobility.

Non-parabolicity influences scattering behavior.

Abstract

In this paper the scattering rates of electrons in thin free standing GaAs quantum wires in the electric quantum limit are calculated self-consistently taking into account the collisional broadening caused by scattering processes. The following mechanisms of scattering are considered: one-dimensional acoustic and polar optical phonons, surface roughness and ionized impurities. The non-parabolicity of electron energy spectrum is also taken into account.