InAs/InP single quantum wire formation and emission at 1.5 microns

TL;DR

This paper reports the growth and optical characterization of InAs/InP quantum wires emitting at 1.5 microns, demonstrating their potential for telecom applications through self-assembly and stress measurement techniques.

Contribution

It introduces a method for fabricating InAs/InP quantum wires with controlled dimensions and demonstrates their optical emission at telecom wavelengths.

Findings

Quantum wires exhibit strong photoluminescence at 1.5 microns.

Nanostructures are highly asymmetric with length exceeding ten times their width.

Monolayer fluctuations influence the optical features observed.

Abstract

Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 microns. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process.