Light emitting single electron transistors

TL;DR

This paper theoretically investigates light-emitting single-electron transistors made from quantum dots, demonstrating their potential for amplification of small signals and use as single-photon detectors through nonequilibrium Green's function analysis.

Contribution

It introduces a theoretical model for LESETs showing their ability to amplify small signals and function as single-photon detectors using quantum dot technology.

Findings

Small ac signals can be amplified via exciton-assisted tunnelling.

LESETs can serve as efficient single-photon detectors.

Theoretical analysis using nonequilibrium Green's functions confirms device potential.

Abstract

The dynamic properties of light-emitting single-electron transistors (LESETs) made from quantum dots are theoretically studied by using nonequilibrium Green's function method. Holes residing at QD created by small ac signals added in the base electrode of valence band lead to the exciton assisted tunnelling level for the electron tunnelling from emitter to collector, it is therefore such small signals can be amplified. LESETs can be employed as efficient single-photon detectors.