Spin injection from perpendicular magnetized ferromagnetic $\delta$-MnGa into (Al,Ga)As heterostructures
C. Adelmann, X. Lou, H.-S. Chiang, J.L. Hilton, B.D. Schultz, S., McKernan, P.A. Crowell, C.J. Palmstrom

TL;DR
This paper demonstrates electrical spin injection from perpendicular magnetized ferromagnetic $ extdelta$-MnGa into (Al,Ga)As heterostructures, showing potential for spintronic devices with remanent magnetization detection without external fields.
Contribution
It introduces $ extdelta$-MnGa as a ferromagnetic source for spin injection with strong perpendicular anisotropy, enabling spin detection at remanence in (Al,Ga)As heterostructures.
Findings
Spin injection is achieved from $ extdelta$-MnGa into (Al,Ga)As LEDs.
Spin polarization can be detected without an external magnetic field.
The bias and temperature dependence resemble Fe-based spin LEDs.
Abstract
Electrical spin injection from ferromagnetic -MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The -MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.
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