Spin relaxation in $n$-type GaAs quantum wells from a full microscopic approach
J. Zhou, J. L. Cheng, M. W. Wu

TL;DR
This paper presents a comprehensive microscopic study of spin relaxation in n-type GaAs quantum wells across a wide temperature range, accurately matching experimental data and revealing the effects of various scattering mechanisms.
Contribution
The study provides a full microscopic calculation of spin relaxation times considering all relevant scattering processes, aligning well with experimental results and exploring temperature-dependent behaviors.
Findings
Good agreement with experimental spin relaxation times from 20 K to 300 K.
Identification of a Coulomb scattering-induced peak in spin relaxation at low temperatures.
Prediction of different hot-electron spin kinetics at low versus high temperatures.
Abstract
We perform a full microscopic investigation on the spin relaxation in -type (001) GaAs quantum wells with AlGaAs barrier due to the D'yakonov-perel' mechanism from nearly 20 K to the room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron--acoustic-phonon, the electron--longitudinal-optical-phonon, the electron--nonmagnetic-impurity and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno {\em et al.} [Physica E {\bf 6}, 817 (2000)] over the whole temperature regime (from 20 K to 300 K). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
