Electric Dipole Induced Spin Resonance in Disordered Semiconductors

TL;DR

This paper provides a theoretical analysis of electric dipole induced spin resonance (EDSR) in disordered two-dimensional electron gases, highlighting how disorder influences spin dynamics and identifying optimal conditions for experimental observation.

Contribution

It introduces a detailed theoretical framework for EDSR in disordered semiconductors, emphasizing the role of spin vertex corrections and specific geometries.

Findings

Out-of-plane magnetization component at resonance persists despite disorder.

Spin Hall current can be generated by EDSR under certain conditions.

Optimal parameters for observing EDSR are identified.

Abstract

One of the hallmarks of spintronics is the control of magnetic moments by electric fields enabled by strong spin-orbit interaction (SOI) in semiconductors. A powerful way of manipulating spins in such structures is electric dipole induced spin resonance (EDSR), where the radio-frequency fields driving the spins are electric, and not magnetic like in standard paramagnetic resonance. Here, we present a theoretical study of EDSR for a two-dimensional electron gas in the presence of disorder where random impurities not only determine the electric resistance but also the spin dynamics via SOI. Considering a specific geometry with the electric and magnetic fields parallel and in-plane, we show that the magnetization develops an out-of-plane component at resonance which survives the presence of disorder. We also discuss the spin Hall current generated by EDSR. These results are derived in a diagrammatic approach with the dominant effects coming from the spin vertex correction, and the optimal parameter regime for observation is identified.