High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly

TL;DR

This paper presents a method for fabricating high-performance, hysteresis-free carbon nanotube FETs using directed assembly and self-assembled monolayers, enabling scalable production with improved device stability.

Contribution

It introduces a scalable assembly process for SWNT-FETs that eliminates hysteresis by integrating hydrophobic SAMs, avoiding CVD-related issues.

Findings

FETs exhibit performance comparable to state-of-the-art devices.

The process enables large-scale CNT circuit assembly.

Hysteresis is eliminated through SAM integration.

Abstract

High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art devices, and the process provides a route to large-scale functional CNT circuit assembly that circumvents problems inherent in processes relying on chemical vapor deposition (CVD). Furthermore, the integration of hydrophobic self-assembled monolayers (SAMs) in the device structure eliminates the primary source of gating hysteresis in SWNT-FETs, which leads to hysteresis-free FET operation while exposing unmodified nanotube surfaces to ambient air.