Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

TL;DR

This study demonstrates electrically-detected magnetic resonance in silicon with ion-implanted phosphorus nanostructures at 5 K, enabling detection of signals from fewer than 100 donors, advancing quantum information research.

Contribution

The paper introduces a method to detect EDMR signals from extremely small phosphorus nanostructures, approaching single-donor sensitivity in silicon.

Findings

EDMR signals from less than 100 donors detected

Technique enables study of single donor spins

Potential applications in quantum information processing

Abstract

We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.