The short-range correlations of a doped Mott insulator

TL;DR

This study numerically investigates a doped Mott insulator model, revealing how local spin correlations around a mobile hole lead to a two-band structure and explain pseudogap phenomena and electron-hole asymmetry.

Contribution

It introduces a two-band picture based on local spin correlations that accounts for various experimental and theoretical observations in doped Mott insulators.

Findings

Identification of coexistence of two different spin correlations

Explanation of the two-band structure in doped Mott insulators

Insight into doping dependence of pseudogap phenomena

Abstract

This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to this interplay, two different spin correlations coexist around a mobile vacancy. These local correlations provide an effective two-band picture that explains the two-band structure observed in various theoretical and experimental studies, the doping dependence of the momentum space anisotropic pseudogap phenomena and the asymmetry between hole and electron doped cuprates.