Spin interference in silicon three-terminal one-dimensional rings

TL;DR

This study demonstrates the spin transistor effect in a silicon-based ring structure, revealing how spin-dependent transport can be controlled via Rashba spin-orbit interaction and external magnetic fields.

Contribution

First observation of spin transistor effect in silicon quantum rings with gate-controlled Rashba spin-orbit interaction and detailed analysis of phase and amplitude sensitivity.

Findings

Spin transistor effect observed in silicon quantum rings.

Amplitude and phase of conductance oscillations are influenced by Rashba interaction.

Interplay of spin polarization and spin-orbit coupling affects quantum conductance features.

Abstract

We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the bias voltage that are applied perpendicularly to the plane of the double-slit ring. Firstly, the amplitude and phase sensitivity of the 0.7(2e^2/h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction. Secondly, the quantum scatterers connected to two one-dimensional leads and the quantum point contact inserted are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations.