Hole Transport in p-Type ZnO

TL;DR

This paper models hole transport in p-type ZnO using a two-band approach, analyzing temperature-dependent Hall effect data and identifying dominant lattice scattering mechanisms.

Contribution

It introduces a detailed two-band model for hole transport in p-type ZnO and examines the effects of compensation ratios on mobility.

Findings

Lattice scattering by acoustic deformation potential is dominant.

Theoretical Hall mobility at 7x10^{18} cm^{-3} is about 70 cm^2V^{-1}s^{-1} at 300 K.

Compensation ratios significantly influence Hall mobilities.

Abstract

A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are calculated using the ``relaxation time approximation'' as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is dominant. In the calculation of the scattering rate for ionized impurity mechanism, the activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at acceptor concentration of $7 \times 10^{18}$ cm$^3$ is about 70 cm$^2$V$^{-1}$s$^{-1}$ with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.