Electron-Phonon Correlation Effects in Molecular Transistors
C. A. Balseiro, P. S. Cornaglia, D. R. Grempel

TL;DR
This paper analyzes how electron-electron and electron-phonon interactions influence molecular transistors, revealing effects like weakened gate dependence, new fluctuation channels, and observable spectral features.
Contribution
It provides an analytical study of electron-phonon effects in the Kondo regime, introducing a model that explains experimental anomalies and predicts spectral signatures.
Findings
Weakening of Kondo temperature dependence on gate voltage
Emergence of a dynamical Jahn-Teller distortion
Low energy peak in phonon spectral density
Abstract
The interplay of electron-electron and electron-phonon interactions is studied analytically in the Kondo regime. A Holstein electron-phonon coupling is shown to produce a weakening of the gate voltage dependence of the Kondo temperature and may explain the observed anomalies in some of these devices. A molecular center-of-mass mode opens a new channel for charge and spin fluctuations and in the antiadabatic limit the latter are described by an asymmetric two-channel Kondo model. Below the Kondo temperature the system develops a dynamical Jahn-Teller distortion and a low energy peak emerges in the phonon spectral density that could be observed in Raman microscopy experiments.
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