Specular Andreev reflection in graphene

TL;DR

This paper explores the unique Andreev reflection phenomena in graphene, revealing how electron-hole conversion can be either retro or specular, especially in weakly doped regimes, with implications for superconducting interfaces.

Contribution

It introduces the concept of specular Andreev reflection in graphene and analyzes its conditions and effects, which was not previously understood.

Findings

Electron-hole conversion occurs with unit efficiency at normal incidence.

Specular Andreev reflection dominates in weakly doped graphene.

Transition from retro to specular reflection affects subgap conductance voltage dependence.

Abstract

By combining the Dirac equation of relativistic quantum mechanics with the Bogoliubov-De Gennes equation of superconductivity we investigate the electron-hole conversion at a normal-metal--superconductor interface in graphene. We find that the Andreev reflection of Dirac fermions has several unusual features: 1) The electron and hole occupy different valleys of the band structure; 2) At normal incidence the electron-hole conversion happens with unit efficiency in spite of the large mismatch in Fermi wave lengths at the two sides of the interface; and, most fundamentally: 3) Away from normal incidence the reflection angle may be the same as the angle of incidence (retro-reflection) or it may be inverted (specular reflection). Specular Andreev reflection dominates in weakly doped graphene, when the Fermi wave length in the normal region is large compared to the superconducting coherence length. We find that the transition from retro-reflection to specular reflection with decreasing doping is associated with an inversion of the voltage dependence of the subgap conductance of the interface.