Lande g-tensor in semiconductor nanostructures

TL;DR

This paper investigates the g-tensor properties of InAs quantum dot shells under magnetic fields, revealing differences between s and p states that inform understanding of their electronic and spin-related behaviors.

Contribution

It provides a detailed experimental mapping of the g-tensor in InAs quantum dots, highlighting the contrasting behaviors of s and p shells and their relation to confinement and delocalization.

Findings

g-tensor for s-shell is highly sensitive to magnetic field orientation

p-shell g-tensor resembles surrounding GaAs, indicating delocalization

Different behaviors of s and p shells reveal details of quantum dot confinement

Abstract

Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directions, allowing the mapping of the g-tensor modulus for the s and p shells. We found that the g-tensors for the s and p shells show a very different behavior. The s-state in being more localized allows the probing of the confining potential details by sweeping the magnetic field orientation from the growth direction towards the in-plane direction. As for the p-state, we found that the g-tensor modulus is closer to that of the surrounding GaAs, consistent with a larger delocalization. These results reveal further details of the confining potentials of self-assembled quantum dots that have not yet been probed, in addition to the assessment of the g-tensor, which is of fundamental importance for the implementation of spin related applications.