Comment on "Performance of a spin based insulated gate field effect transistor" [cond-mat/0603260] [cond-mat/0603260]

TL;DR

This paper critically evaluates claims about a spin-based FET's advantages over MOSFETs, demonstrating that the asserted benefits in threshold voltage, switching energy, and leakage current are invalid.

Contribution

The authors provide a critical analysis that refutes previous claims of superior performance of a specific spin-based FET design.

Findings

All three claims of lower threshold voltage, switching energy, and leakage current are invalid.

The analysis challenges the validity of prior claims about the SPINFET's performance.

The paper clarifies misconceptions about the advantages of spin-based FETs.

Abstract

In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current than a comparable metal oxide semiconductor field effect transistor (MOSFET). Here, we show that all three claims of HF are invalid.