Statistics of electron tunneling in normal tunnel junctions

TL;DR

This paper provides a comprehensive analytical and numerical study of electron tunneling statistics in normal tunnel junctions, considering environmental effects and deriving full counting, voltage, and phase statistics for any observation time.

Contribution

It introduces a combined analytical and numerical approach to analyze electron tunneling statistics, including circuit effects, with full statistical descriptions for arbitrary observation times.

Findings

Derived full counting, voltage, and phase statistics for tunnel junctions

Validated analytical results with Monte-Carlo simulations

Accounted for circuit (environment) effects in tunneling statistics

Abstract

Statistics of electron tunneling in normal tunnel junctions is studied analytically and numerically taking into account circuit (environment) effects. Full counting statistics, as well as full statistics of voltage and phase have been found for arbitrary times of observation. The theoretical analysis was based on the classical master equation, whereas the numerical simulations employed standard Monte-Carlo methods.