Comparison of the Band Alignment of Strained and Strain-Compensated Gainnas QWS on Gaas and Inp Substrates

TL;DR

This paper compares the band alignment of strained and strain-compensated GaInNAs quantum wells on GaAs and InP substrates, highlighting the advantages of tensile strain and strain compensation for laser applications.

Contribution

It provides a detailed analysis of band alignment differences in strained versus strain-compensated quantum wells on different substrates, guiding optimal design for high-temperature lasers.

Findings

Tensile strain on InP substrates yields better band alignment than compressive strain on GaAs.

Both substrates offer deeper conduction wells, beneficial for laser performance.

Strain compensation improves band alignment, especially on GaAs substrates.

Abstract

We present a comparison of the band alignment of the Ga1-xInxNyAs1-y active layers on GaAs and InP substrates in the case of conventionally strained and strained-compensated quantum wells. Our calculated results present that the band alignment of the tensiley strained Ga1-xInxNyAs1-y quantum wells on InP substrates is better than than that of the compressively strained Ga1-xInxNyAs1-y quantum wells on GaAs substrates and both substrates provide deeper conduction wells. Therefore, tensiley strained Ga1-xInxNyAs1-y quantum wells with In concentrations of x<=0.53 on InP substrates can be used safely from the band alignment point of view when TM polarisation is required. Our calculated results also confirm that strain compensation can be used to balance the strain in the well material and it improve especially the band alignment of dilute nitride Ga1-xInxNyAs1-y active layers on GaAs substrates. Our calculations enlighten the intrinsic superiority of N-based lasers and offer the conventionally strained and strain-compensated Ga1-xInxNyAs1-y laser system on GaAs and InP substrates as ideal candidates for high temperature operation.