Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures

TL;DR

This paper uses advanced simulation methods to analyze how quantum confinement affects the capacitance in ultra-scaled nanostructures, providing insights crucial for experimental interpretation and device parameter extraction.

Contribution

It introduces a multi-configurational Green's function approach to accurately simulate Coulomb effects beyond mean-field models in nanostructures.

Findings

Quantum confinement causes significant corrections to capacitance.

Simulated Coulomb-blockade characteristics enable effective capacitance extraction.

Results improve interpretation of experimental capacitance measurements.

Abstract

With the help of a multi-configurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond the scope of a selfconsistent mean-field description. From the simulated Coulomb-blockade characteristics we derive effective system capacitances and demonstrate how quantum confinement effects give rise to corrections. Such deviations are crucial for the interpretation of experimentally determined capacitances and the extraction of application-relevant system parameters.