Self-consistent calculations of phonon scattering rates in GaAs transistor structure with one-dimensional electron gas

TL;DR

This paper presents a self-consistent method for calculating phonon scattering rates in GaAs quantum wire transistors, emphasizing the importance of electron energy level determination and collisional broadening effects under varying gate bias.

Contribution

It introduces a rigorous approach combining Schrödinger and Poisson equations with collisional broadening to accurately compute phonon scattering rates in GaAs quantum wire structures.

Findings

Scattering rates depend on gate bias.

Self-consistent calculations improve accuracy.

Collisional broadening significantly affects scattering rates.

Abstract

Self-consistent calculations of acoustic and polar optical phonon scattering rates in GaAs quantum wire transistor structures were carried out with account of collisional broadening. The influence of the gate bias on the scattering rates was examined, too. It was shown that in order to treat the scattering rates rigorously it is important to search for electron energy levels by means of the self-consistent solution of Schrodinger and Poisson equations and to take into account the collisional broadening.