Ionized Impurity and Surface Roughness Scattering Rates of Electrons in Semiconductor Structures with One-Dimensional Electron Gas and Broadened Energy Levels

TL;DR

This paper develops a method to calculate electron scattering rates due to impurities and surface roughness in thin semiconductor quantum wires, incorporating energy level broadening and screening effects.

Contribution

It introduces a calculation approach that accounts for energy level broadening and compares different surface roughness autocorrelation functions in quantum wires.

Findings

Surface roughness scattering rates vary with autocorrelation function type.

Screening effects significantly influence impurity scattering rates.

Energy level broadening impacts overall electron scattering behavior.

Abstract

An approach to calculation of the ionized impurity and surface roughness scattering rates of electrons in very thin semiconductor quantum wires taking into account the energy level broadening is worked out. It is assumed that all the electrons in the structure are in the electric quantum limit. The screening is taken into account while considering the ionized impurity scattering. Comparison of the surface roughness scat-tering rates calculated using the exponential and Gaussian autocorrelation functions is done.