Kondo Shuttling in Nanoelectromechanical Single-Electron Transistor

TL;DR

This paper theoretically explores how mechanical motion in a nanoelectromechanical single-electron transistor influences the Kondo effect and charge shuttling, affecting conductance and resonance conditions.

Contribution

It introduces a model for mechanically assisted Kondo effect in NEM-SETs, showing how motion modulates the Kondo temperature and transport properties.

Findings

Mechanical motion increases the effective Kondo temperature.

Oscillating Kondo temperature alters conductance scaling.

Conditions for tuning the Abrikosov-Suhl resonance are discussed.

Abstract

We investigate theoretically a mechanically assisted Kondo effect and electric charge shuttling in nanoelectromechanical single-electron transistor (NEM-SET). It is shown that the mechanical motion of the central island (a small metallic particle) with the spin results in the time dependent tunneling width which leads to effective increase of the Kondo temperature. The time-dependent oscillating Kondo temperature T_K(t) changes the scaling behavior of the differential conductance resulting in the suppression of transport in a strong coupling- and its enhancement in a weak coupling regimes. The conditions for fine-tuning of the Abrikosov-Suhl resonance and possible experimental realization of the Kondo shuttling are discussed.