The semiconductor-to-ferromagnetic-metal transition in FeSb2
A. V. Lukoyanov, V. V. Mazurenko, V. I. Anisimov, M. Sigrist, and T., M. Rice

TL;DR
This paper investigates FeSb2 as a nearly ferromagnetic small gap semiconductor, demonstrating a transition to a ferromagnetic metal under an external magnetic field, similar to FeSi, using computational methods.
Contribution
It reveals the magnetic and electronic degeneracy in FeSb2 using LDA+U calculations, proposing a transition mechanism akin to FeSi and FeSi1-xGex alloys.
Findings
FeSb2 is a nearly ferromagnetic small gap semiconductor.
Magnetic and semiconducting states are energetically degenerate at U=2.6 eV.
External magnetic fields can induce a transition to a ferromagnetic metal.
Abstract
We propose FeSb2 to be a nearly ferromagnetic small gap semiconductor, hence a direct analog of FeSi. We find that despite different compositions and crystal structures, in the local density approximation with on-site Coulomb repulsion correction (LDA+U) method magnetic and semiconducting solutions for U=2.6 eV are energetically degenerate similar to the case of FeSi. For both FeSb2 and FeSi (FeSi1-xGex alloys) the underlying transition mechanism allows one to switch from a small gap semiconductor to a ferromagnetic metal with magnetic moment 1 muB per Fe ion with external magnetic field.
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