Mechanism and Scalability in Resistive Switching of Metal-Pr0.7Ca0.3MnO3 Interface

TL;DR

This paper investigates the mechanisms behind resistive switching at metal-Pr0.7Ca0.3MnO3 interfaces, highlighting defect roles and scalability challenges, and suggests interface treatments to improve device size scalability.

Contribution

It identifies defect density and correlation effects as key factors in resistive switching and scalability, offering insights into interface treatment strategies.

Findings

Shallow defects dominate switching behavior.

Defect density limits device size scalability.

Interface treatments can modify switching characteristics.

Abstract

The polarity-dependent resistive-switching across metal-Pr0.7Ca0.3MnO3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately limit the device size. While the defects generated/annihilated by the pulses and the associated carrier depletion seem to play the major role at lower defect density, the defect correlations and their associated hopping ranges appear to dominate at higher defect density. Therefore, the switching characteristics, especially the size-scalability, may be altered through interface treatments.