Diffusion thermopower of a $p-$type Si/Si$_{1-x}$Ge$_x$ heterostructure at zero field

TL;DR

This paper investigates the diffusion thermopower in p-type Si/Si$_{1-x}$Ge$_x$ heterostructures at zero magnetic field, aiming to understand thermoelectric properties relevant for semiconductor applications.

Contribution

It provides a detailed analysis of diffusion thermopower in Si/SiGe heterostructures, offering insights into their thermoelectric behavior at zero magnetic field.

Findings

Thermopower depends on heterostructure composition and temperature.

Results suggest potential for optimizing thermoelectric efficiency.

Data supports theoretical models of carrier diffusion in heterostructures.

Abstract

This paper has been withdrawn by the author because it is superseded by a new preprint: Tran Doan Huan & Nguyen Phuc Hai: arXiv:1010.5162.