Interplay between carrier and impurity concentrations in annealed Ga$_{1-x}$Mn$_{x}$As intrinsic anomalous Hall Effect

TL;DR

This paper explores how carrier and impurity concentrations influence the anomalous Hall Effect in annealed GaMnAs, revealing a universal crossover from intrinsic to extrinsic behavior and confirming theoretical models involving Berry phase contributions.

Contribution

It introduces new equations of motion that incorporate Berry phase effects and demonstrates the tunability of the intrinsic anomalous Hall Effect in GaMnAs.

Findings

Universal crossover from quadratic to linear scaling behavior.

Anomalous Hall conductivities remain constant when scaled by carrier concentration.

Qualitative and quantitative agreement with theoretical predictions.

Abstract

Investigating the scaling behavior of annealed Ga$_{1-x}$Mn$_{x}$As anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear, attributed to the anomalous Hall Effect intrinsic and extrinsic origins, respectively. Furthermore, measured anomalous Hall conductivities when properly scaled by carrier concentration remain constant, equal to theoretically predicated values, spanning nearly a decade in conductivity as well as over 100 K in T$_{C}$. Both the qualitative and quantitative agreement confirms the validity of new equations of motion including the Berry phase contributions as well as tunablility of the intrinsic anomalous Hall Effect.