Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
Vadim V. Cheianov, Vladimir I. Fal'ko

TL;DR
This paper demonstrates that in graphene, an electrostatically created n-p junction selectively transmits electrons approaching perpendicularly, leading to unique magnetoresistance effects and noise characteristics.
Contribution
It reveals the angular selectivity of quasiparticle transmission in graphene n-p junctions and its implications for magnetoresistance and noise.
Findings
Selective transmission occurs only for near-perpendicular quasiparticles.
Non-local magnetoresistance effects are observed in junction arrays.
Unusual Fano factor in current noise for graphene n-p junctions.
Abstract
We show that an electrostatically created n-p junction separating the electron and hole gas regions in a graphene monolayer transmits only those quasiparticles that approach it almost perpendicularly to the n-p interface. Such a selective transmission of carriers by a single n-p junction would manifest itself in non-local magnetoresistance effect in arrays of such junctions and determines the unusual Fano factor in the current noise universal for the n-p junctions in graphene.
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