Inverted spin polarization of Heusler alloys for new spintronic devices

TL;DR

This paper introduces a novel magnetic logic device using Heusler alloys that offers enhanced functionality and reduced size, leveraging unique TMR properties at room temperature for advanced spintronic applications.

Contribution

It presents a new spintronic device architecture based on Heusler alloys with tunable TMR, overcoming limitations of existing magnetic logic and FPGAs.

Findings

50% smaller unit cell compared to conventional designs

Positive and negative TMR values at different bias voltages

Operation at room temperature

Abstract

A new magnetic logic overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive and negative TMR values at different bias voltages at room temperature which generally adds an additional degree of freedom to all spintronic devices.