Condensation of electron-hole pairs in a degenerate semiconductor at room temperature

TL;DR

This paper presents a theoretical demonstration that electron-hole pairs in a highly degenerate semiconductor plasma can condense at room temperature, with the critical temperature depending on Fermi energies and exceeding 300 K at high densities.

Contribution

It introduces a new theoretical model showing room-temperature condensation of electron-hole pairs driven by plasma degeneracy and resonant electromagnetic fields.

Findings

Critical temperature exceeds 300 K at high electron-hole densities.

Condensation is driven by plasma degeneracy, not the order parameter D.

Model aligns with existing experimental data.

Abstract

It has been theoretically shown that in large-density semiconductor plasma there exist an energy level of a bound electron-hole pair (a composite boson) at the band gap. Filling this level up occurs through the condensation of electron-hole pairs with the use of mediating photons of a resonant electromagnetic field. We have demonstrated that in the case of a strong degeneracy of the plasma the critical temperature of the condensation is determined by the Fermi energies of the plasma components rather than the order parameter D. The critical temperature can exceed 300 K at electron-hole densities as large as 6.1018 cm-3. The theoretical model is consistent with available experimental data