Diode Effect in Asymmetric Double Tunnel Barriers with Single Metal Nanoclusters

TL;DR

This paper investigates the diode effect in asymmetric double tunnel barriers with metal nanoclusters, demonstrating high rectification ratios at room temperature and modeling the phenomena with quantum and charging effects.

Contribution

It introduces a model combining discrete quantum states and charging effects to explain tunneling behavior in asymmetric double barriers with metal nanoclusters.

Findings

Achieved record high rectification ratio of 10000 at room temperature.

Observed well-defined steps in current-voltage characteristics.

Modeled experimental features using quantum states and charging effects.

Abstract

Asymmetric double tunnel barriers with the center electrode being a metal cluster in the quantum regime are studied. The zero dimensionality of the clusters used and the associated quantized energy spectra are manifest in well-defined steps in the current voltage characteristic (IVC). Record high current rectification ratios of 10000 for tunneling through such clusters are demonstrated at room temperature. We are able to account for all of the experimentally observed features by modeling our double barrier structures using a combination of discrete states and charging effects for tunneling through quantum dots.