Theory of Spin Hall Effects in Semiconductors
Hans-Andreas Engel, Emmanuel I. Rashba, and Bertrand I. Halperin

TL;DR
This paper reviews the theoretical foundations of the spin Hall effects in semiconductors, covering mechanisms, equations, and phenomena related to spin transport induced by electric currents without magnetic fields.
Contribution
It provides a comprehensive overview of the theoretical models, mechanisms, and recent developments in understanding spin Hall effects in various semiconductor systems.
Findings
Different mechanisms of spin transport identified: spin precession, skew scattering, side jump.
Relations between spin currents and spin polarization clarified.
Electrically induced spin effects in bulk, boundaries, and mesoscopic systems summarized.
Abstract
Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral boundaries. These effects, which do not require an applied magnetic field, can originate in a variety of intrinsic and extrinsic spin-orbit coupling mechanisms and depend on geometry, dimension, impurity scattering, and carrier density of the system--making the analysis of these effects a diverse field of research. In this article, we give an overview of the theoretical background of the spin Hall effects and summarize some of the most important results. First, we explain effective spin-orbit Hamiltonians, how they arise from band structure, and how they can be understood from symmetry considerations; including intrinsic coupling due to bulk inversion or…
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Taxonomy
TopicsQuantum and electron transport phenomena · Graphene research and applications · Advancements in Semiconductor Devices and Circuit Design
