Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique

TL;DR

This paper presents a novel, simple technique combining focused ion beam milling and hydrogen ion implantation to induce large magnetoresistance in La2/3Ca1/3MnO3 thin films, achieving over 60% MR at 5 T across a broad temperature range.

Contribution

The authors introduce a new metal masked ion damage method that enhances magnetoresistance in manganite thin films, offering a flexible and scalable fabrication process.

Findings

Achieved over 60% magnetoresistance at 5 T across 230 K.

Maximum MR of 95% at around 70 K.

Technique demonstrates high potential for device integration.

Abstract

e have developed a simple process to obtain large magnetoresistance (MR) in perovskite manganite thin films by a combination of focused ion beam (FIB) milling and 120 keV H$_{2}^{+}$ ion implantation. Metal slits about 70 nm in width were printed by 30 kV focused Ga ion beam nanolithography on a 4 mm track, and the materials in these slits are then irradiated by the accelerated H$_{2}^{+}$ ions. Using this method, in a magnetic field of 5 T we can get a MR${>}$60% over a 230 K temperature scope, with a maximum value of 95% at around 70 K. This technique is very promising in terms of its simplicity and flexibility of fabrication and has potential for high-density integration.