Performance Assessment of Sub-Percolating Nanobundle Network Transistors by an Analytical Model

TL;DR

This paper introduces an analytical model for nanobundle network transistors that accurately predicts their electrical behavior below the percolation threshold, aiding design and optimization.

Contribution

It presents a physics-based analytical model validated by simulations and experiments, offering new insights into NBT performance and purification processes.

Findings

Model accurately predicts I-V characteristics

Provides design parameter relations for optimization

Validates with experimental and simulation data

Abstract

Nanobundle network transistors (NBTs) have emerged as a viable, higher performance alternative to poly-silicon and organic transistors with possible applications in macroelectronic displays, chemical/biological sensors, and photovoltaics. A simple analytical model for I-V characteristics of NBTs (below the percolation limit) is proposed and validated by numerical simulation and experimental data. The physics-based predictive model provides a simple relation between transistor characteristics and design parameters which can be used for optimization of NBTs. The model provides important insights into the recent experiments on NBT characteristics and electrical purification of nanobundle networks.