Current-Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A Bottom-up Perspective

TL;DR

This paper develops a universal scaling formula for the current-voltage behavior of long-channel nanobundle thin-film transistors, enabling performance prediction across different geometries and biasing conditions from a single measurement.

Contribution

It generalizes classical linear response theory to nonlinear regimes, providing a universal formula for NB-TFT I-V characteristics based on geometrical and biasing parameters.

Findings

Derived a universal scaling formula for NB-TFT I-V characteristics.

Showed that single-device measurements can predict performance of various geometries.

Validated the formula under general conditions for NB-TFTs.

Abstract

By generalizing the classical linear response theory of stick percolation to nonlinear regime, we find that the drain current of a Nanobundle Thin Film Transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LS g(LS/LC, rho_S * LS * LS) f(VG, VD), where A is a technology-specific constant, g is function of geometrical factors like stick length (LS), channel length (LC), and stick density (rho_S) and f is a function of drain (VD) and gate (VG) biasing conditions. This scaling formula implies that the measurement of full I-V characteristics of a single NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.