Magnetic field-assisted manipulation and entanglement of Si spin qubits

TL;DR

This paper proposes a theoretical method to control and identify silicon donor-electron spin qubits using electric and magnetic fields, enhancing quantum logic operations and entanglement in quantum computing architectures.

Contribution

It introduces a theoretical framework for manipulating and distinguishing donor-bound electron qubits in silicon through combined electric and magnetic field tuning.

Findings

Magnetic fields enable individual qubit identification near interfaces.

Electric and magnetic field tuning can facilitate two-qubit entanglement.

The approach supports reliable quantum logic and read-out operations.

Abstract

Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that such magnetic fields may also be valuable in controlling two-qubit entanglement via donor electron pairs near the interface.