Quantum derivatives and high-frequency gain in semiconductor superlattices
A. V. Shorokhov, K. N. Alekseev

TL;DR
This paper develops simple difference formulas to analyze small-signal absorption and gain in microwave-driven semiconductor superlattices, offering a geometric interpretation that aids in optimizing THz gain conditions.
Contribution
It introduces a new theoretical approach with simple formulas and geometric insights to connect quasistatic and dynamic regimes in ac-driven superlattices.
Findings
Derived simple difference formulas for small-signal absorption.
Provided geometric interpretation for gain optimization.
Linked quasistatic and dynamic regimes in superlattices.
Abstract
We derive simple difference formulas describing a small-signal absorption of THz field in a semiconductor superlattice driven by a microwave pump. We give a transparent geometric interpretation of these formulas that allows a search of optimum conditions for the gain employing only a simple qualitative analysis. Our theoretical approach provides a powerful tool for finding the correspondence between quasistatic and dynamic regimes in ac-driven semiconductor superlattices.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Cold Atom Physics and Bose-Einstein Condensates · Quantum and electron transport phenomena
