An ultra sensitive radio frequency single electron transistor working up to 4.2 K

TL;DR

This paper reports the development of a radio frequency single electron transistor (rf-SET) capable of operating with high charge sensitivity up to 4.2 K, significantly advancing practical applications of quantum sensing at higher temperatures.

Contribution

The work introduces a rf-SET with unprecedented high charge sensitivity at 4.2 K, demonstrating its potential for practical quantum measurement applications.

Findings

Charge sensitivity of 1.9 μe/√Hz at 4.2 K

Charge sensitivity of 0.9 μe/√Hz in superconducting state at 40 mK

Charge sensitivity of 1.0 μe/√Hz in normal state at 40 mK

Abstract

We present the fabrication and measurement of a radio frequency single electron transistor (rf-SET), that displays a very high charge sensitivity of 1.9 microlectrons/sqrt(Hz) at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0 microlectrons/sqrt(Hz) in the superconducting and normal state respectively. The sensitivity was measured as a function of radio frequency amplitude at three different temperatures: 40 mK, 1.8 K and 4.2 K.