Simulation and optimization of arsenic-implanted THz emitters

TL;DR

This paper uses 3D Monte Carlo simulations to study how arsenic ion implantation affects the performance of THz emitters, revealing increased bandwidth but reduced low-frequency spectral intensity.

Contribution

It introduces a detailed simulation approach to analyze arsenic ion implantation effects on THz emitter performance, highlighting the trade-offs involved.

Findings

Ion implantation creates a uniform vacancy distribution in GaAs.

Implantation increases THz bandwidth.

Spectral intensity decreases at lower frequencies.

Abstract

We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As+ ionimplantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As+ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributing to THz generation in these devices. We calculate that ionimplantation increases the THz bandwidth of the devices with the cost of decreasing the spectral intensity at lower THz frequencies.