Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors

TL;DR

This study uses infrared spectro-microscopy to investigate the nanometer-thick accumulation layers in organic FETs, revealing how the gate insulator influences charge distribution and interface phenomena.

Contribution

It introduces IR spectroscopy as a novel tool for probing nanoscale electronic excitations at the semiconductor-insulator interface in organic FETs.

Findings

IR spectroscopy uncovers charge injection landscapes

Gate insulator critically affects length scales of accumulation layers

Demonstrates IR spectroscopy's potential for nanoscale interface analysis

Abstract

We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.