Carrier Dynamics in Submonolayer InGaAs/GaAs Quantum Dots
Zhangcheng Xu, Yating Zhang, J{$1}rn M. Hvam, Jingjun Xu, Xiaoshuang, Chen, Wei Lu
TL;DR
This study investigates the carrier dynamics in submonolayer InGaAs/GaAs quantum dots using various photoluminescence techniques, revealing how size and composition affect recombination and capture times.
Contribution
It provides new insights into the relationship between quantum dot size, composition, and carrier dynamics in submonolayer InGaAs/GaAs QDs.
Findings
Shorter recombination lifetimes in higher energy QDs.
Longer capture times in higher energy QDs.
Correlation between QD size, In content, and emission energy.
Abstract
Carrier dynamics of submonolayer (SML) InGaAs/GaAs quantum dots (QDs) were studied by micro-photoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon modes. TRPL reveal shorter recombination lifetimes and longer capture times for the QDs with higher emission energy. This suggests that the smallest SML QDs are formed by perfectly vertically correlated 2D InAs islands, having the highest In content and the lowest emission energy, while a slight deviation from the perfectly vertical correlation produces larger QDs with lower In content and higher emission energy.
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