Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices

TL;DR

This paper demonstrates the simultaneous observation of current-induced magnetization switching and domain wall resistance in a single (Ga,Mn)As nanodevice, advancing spintronic device development.

Contribution

It reports the first combined observation of both effects in one device, showing progress towards domain wall-based spintronic applications.

Findings

Both effects observed in a single device

Advances towards domain wall spintronic devices

Progress in (Ga,Mn)As nanostructures

Abstract

Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store, transport, and manipulate information.