Hole-LO phonon interaction in InAs/GaAs quantum dots

TL;DR

This paper studies hole-phonon interactions in InAs/GaAs quantum dots, demonstrating the formation of hole-polarons and their role in intraband transitions through combined experimental and theoretical approaches.

Contribution

It introduces a detailed calculation of hole-LO phonon coupling in quantum dots, confirming polaron formation and explaining intraband transitions.

Findings

Experimental evidence of hole-polarons in quantum dots

Good agreement between theory and experiment on transition energies

Demonstration that intraband transitions occur between polaron states

Abstract

We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the experimental data. We calculate the coupling between the mixed hole LO-phonon states using the Fr\"ohlich Hamiltonian, from which we determine the polaron states as well as the energies and oscillator strengths of the valence intraband transitions. The good agreement between the experiments and calculations provides strong evidence for the existence of hole-polarons and demonstrates that the intraband magneto-optical transitions occur between polaron states.