Current-controlled magnetization dynamics in the spin-flip transistor

TL;DR

This paper theoretically investigates current-controlled magnetization dynamics in a spin-flip transistor, revealing a new tunable two-state behavior with potential applications in magnetic devices.

Contribution

It introduces a novel two-state magnetization behavior in a spin-flip transistor under dc bias, analyzed through macrospin and circuit models.

Findings

Discovery of a tunable two-state magnetization behavior.

Analysis of magnetization dynamics under dc bias.

Potential applications in magnetic memory and switching.

Abstract

The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane, with source-drain magnetizations chosen fixed and antiparallel, whereas the third contact magnetization is allowed to move in a weak anisotropy field that guarantees thermal stability of the equilibrium structure at room temperature. We analyze the magnetization dynamics of the free layer under a dc source-drain bias current within the macrospin model and magneto-electronic circuit theory. A new tunable two-state behavior of the magnetization is found and the advantages of this phenomenon and potential applications are discussed.