Hooge's Constant of Carbon Nanotube Field Effect Transistors

TL;DR

This study measures 1/f noise in semiconducting carbon nanotube FETs, finding a specific Hooge's constant and showing air exposure reduces noise levels, providing insights into noise mechanisms in nanotube devices.

Contribution

It reports the first measurement of Hooge's constant for s-CNTs and examines how environmental exposure affects noise characteristics.

Findings

Hooge's constant for s-CNTs is 9.3±0.4×10^-3.

1/f noise is independent of source-drain current, indicating mobility fluctuation.

Air exposure significantly decreases the 1/f noise magnitude.

Abstract

The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is substantially degreased by exposing the devices to air.