Spatially extended nature of resistive switching in perovskite oxide thin films

TL;DR

This paper demonstrates nanoscale reversible resistance switching in La1-xSrxMnO3 thin films using AFM, revealing the spatial extent of resistive changes crucial for future non-volatile memory devices.

Contribution

It provides direct nanoscale observation of resistive switching in perovskite oxide thin films using current measurement AFM, highlighting the spatially extended nature of the effect.

Findings

Reversible resistance switching observed at the nanoscale.

Conductivity increases or decreases locally depending on voltage polarity.

Switching occurs under both continuous and pulsed voltage conditions.

Abstract

We report the direct observation of the electric pulse induced resistance-change (EPIR) effect at the nano scale on La1-xSrxMnO3 (LSMO) thin films by the current measurement AFM technique. After a switching voltage of one polarity is applied across the sample by the AFM tip, the conductivity in a local nanometer region around the AFM tip is increased, and after a switching voltage of the opposite polarity is applied, the local conductivity is reduced. This reversible resistance switching effect is observed under both continuous and short pulse voltage switching conditions. It is important for future nanoscale non-volatile memory device applications.