Magnetophonon resonance in high density, high mobility quantum well systems
C. Faugeras, D. K. Maude, G. Martinez, L. B. Rigal, C. Proust, K.-J., Friedland, R. Hey, K. H. Ploog

TL;DR
This study investigates magnetophonon resonance in GaAs quantum wells with AlAs/GaAs superlattices, revealing interactions of electrons with phonons and confirming the presence of X electrons in the system.
Contribution
It provides experimental evidence of two distinct MPR series from Γ and X electrons, clarifying electron-phonon interactions in high mobility quantum well systems.
Findings
Observation of two MPR series from Γ and X electrons.
Confirmation of X electrons in AlAs quantum wells.
Insights into electron-phonon interactions in superlattice structures.
Abstract
We have investigated the magnetophonon resonance (MPR) effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs superlattices. Two distinct MPR series are observed originating from the and X electrons interacting with the GaAs and AlAs longitudinal optic (LO) phonons respectively. This confirms unequivocally the presence of X electrons in the AlAs quantum well of the superlattice previously invoked to explain the high electron mobility in these structures (Friedland et al. Phys. Rev. Lett. 77,4616 (1996).
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Magnetic properties of thin films
