Intrinsic Domain Wall Resistance in Ferromagnetic Semiconductors
Anh Kiet Nguyen, R. V. Shchelushkin, and Arne Brataas
TL;DR
This paper theoretically investigates the intrinsic resistance caused by magnetic domain walls in zincblende ferromagnetic semiconductors, highlighting the role of spin-orbit interaction and its independence from domain wall shape and width.
Contribution
It reveals the existence of an intrinsic domain wall resistance due to spin-orbit coupling, which is significant and measurable in ferromagnetic semiconductors.
Findings
Intrinsic resistance is independent of domain wall shape and width for large widths.
The intrinsic resistance is comparable to the Sharvin resistance.
The resistance should be experimentally observable.
Abstract
Transport through zincblende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the spin-orbit interaction. The intrinsic resistance is independent of the domain wall shape and width when the latter is larger than the Fermi wavelength. For typical parameters, the intrinsic domain wall resistance is comparable to the Sharvin resistance and should be experimentally measurable.
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