Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

TL;DR

This paper demonstrates how electric fields influence spin-splitting in resonant tunneling devices through Rashba and Stark effects, revealing new insights into excitonic spin dynamics under bias and magnetic fields.

Contribution

It provides experimental evidence of electric-field-induced excitonic spin-splitting combining Rashba and Stark effects in resonant tunneling diodes, a novel observation in this context.

Findings

Electric field modulates excitonic spin-splitting in RTDs.

Charge accumulation affects photoluminescence during bias changes.

Rashba and Stark effects jointly influence spin dynamics.

Abstract

We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under applied bias and magnetic field. The abrupt changes in the photoluminescence, with the applied bias, provide information of the charge accumulation effects on the device.